Disappearance of the divacancy (V2) and trivacancy (V3) complexes upon isochronal and isothermal annealing of electron irradiated Si:O crystals was studied by means of deep level transient spectroscopy. The annealing studies had shown that the V2 and V3 defects were mobile in Si at T>200C and in oxygen-rich material were trapped by interstitial oxygen atoms so resulting in the appearance of V2O and V3O defects. The activation energies for diffusion of the V2 and V3 centers were determined. Density functional modelling calculations were carried out to investigate the migration and reorientation mechanisms of V3 in large silicon super-cells. It was proposed that these comprised a sequence transformations between V3(D3) and V3(C2v) configurations.

Reconfigurations and Diffusion of Trivacancy in Silicon. V.P.Markevich, A.R.Peaker, B.Hamilton, S.B.Lastovskii, L.I.Murin, J.Coutinho, A.V.Markevich, M.J.Rayson, P.R.Briddon, B.G.Svensson: Physica B, 2012, 407[15], 2974-7