Optically detected magnetic resonance techniques revealed single point defects in ultra-narrow silicon quantum wells confined by superconductor δ-barriers. This technique permitted optically detected magnetic resonance identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the transmission spectra within the frameworks of the excitonic normal-mode coupling caused by the microcavities embedded in the silicon quantum well plane.

ODMR of Single Point Defects in Silicon Nanostructures. N.Bagraev, E.Danilovsky, D.Gets, L.Klyachkin, A.Kudryavtsev, R.Kuzmin, A.Malyarenko: Physica Status Solidi C, 2012, 9[5], 1236-41