The dopant dependence of photoluminescence from interstitial-related centers formed by ion implantation and subsequent annealing at 175 to 525C was presented. The evolution of these centers was strongly affected by interstitial-dopant clustering even in the low temperature regime. There was a significant decrease in the W line (1018.2meV) photoluminescence intensity with increasing B concentration. However, an enhancement was also observed in a narrow fabrication window in samples implanted with either P or Ga. The anneal temperature at which the W line intensity was optimized was sensitive to the dopant concentration and type. Furthermore, dopants which were implanted but not activated prior to low temperature thermal processing were found to have a more detrimental effect on the resulting photoluminescence. Splitting of the X line (1039.8meV) arising from implantation damage induced strain was also observed.

Dopant Effects on the Photoluminescence of Interstitial-Related Centers in Ion Implanted Silicon. B.C.Johnson, B.J.Villis, J.E.Burgess, N.Stavrias, J.C.McCallum, S.Charnvanichborikarn, J.Wong-Leung, C.Jagadish, J.S.Williams: Journal of Applied Physics, 2012, 111[9], 094910