In silicon crystals annealed at 1173K, n-type dopant atoms segregated near to a stacking fault ribbon bounded by a pair of partial dislocations and the width of the ribbon was increased. The origin of the width increase was the reduction of the stacking fault energy due to an electronic interaction between the ribbon and the dopant atoms segregating at the ribbon, rather than the reduction of the strain energy around the partial dislocations due to the dopant atoms segregating at the partials.

Doping Effects on the Stability of Stacking Faults in Silicon Crystals. Y.Ohno, Y.Tokumoto, I.Yonenaga: Thin Solid Films, 2012, 520[8], 3296-9