It was shown by means of EPR and NMR technique that at the Si/SiO2 interface at appropriate oxidation temperature (time) local dynamic equilibrium might be achieved. At an oxidation temperature of 1130C, the density of point defects was less than at lower and higher temperatures (1100C and 1200C) and the content of absorbed impurities (hydrogen, oxygen) diminished.

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties. D.Kropman, T.Kärner, S.Dolgov, I.Heinmaa,  T.Laas, C.A.Londos: Physica Status Solidi C, 2011, 8[3], 694-6