The diffusion behaviour of ion-implanted Cs into 6H-SiC and CVD-SiC wafers was investigated by using Rutherford back-scattering spectrometry combined with α-particle channelling and scanning electron microscopy. Implantation was performed at room temperature, 350 and 600C. A strong temperature dependence of irradiation-induced diffusion was observed. Transport mechanisms were studied using isochronal and isothermal annealing methods up to 1500C. Cesium transport in irradiation-damaged SiC was governed by an impurity-trapping mechanism of defect structures and was similar in single and polycrystalline SiC.

Diffusion Behavior of Cesium in Silicon Carbide at T > 1000C. E.Friedland, N.G.van der Berg, T.T.Hlatshwayo, R.J.Kuhudzai, J.B.Malherbe, E.Wendler, W.Wesch: Nuclear Instruments and Methods in Physics Research B, 2012, 286, 102-7