It was recalled that, when light irradiated a semiconductor, incident photons having appropriate wavelengths excited electrons and holes into traps such as point defects and dislocations. This modification of the population of charged defects could alter the flow stress which was required in order to propagate dislocations. This effect was reflected by an inhibition of dislocation motion in type Il-VI compound semiconductors whereas, in type III-V semiconductors, light could enhance dislocation mobility. The basic characteristics of photoplasticity in CdS were reported, and it was shown how it could be exploited so as to reduce dislocation densities in semiconductor materials.

Photoplasticity and Photonic Control of Dislocation Densities in Type II-VI Semiconductors. T.J.Garosshen, J.M.Galligan: Journal of Applied Physics, 1995, 78[8], 5098-102