Membranes of SiC were prepared by curing of precursor polymer (polycarbosilane, PCS) film via electron beam irradiation in helium atmosphere. The membrane prepared via curing of PCS film coated using 10mass% PCS solution for dip-coating followed by immersing it for 30s in PCS solution, exhibited a H2 permeance of 3.1 x 10-7mol/m2/s/Pa and a selectivity of 51 at 523K. The H2 permeance of the membrane was increased in proportion to the temperature by the activated diffusion of H2. This indicated SiC film without pinholes or cracks formed on the support. As the pyrolysis temperature of cured PCS film was increased, the selectivity of the membrane reached a maximum at 923K.

Gas Permeation Property of SiC Membrane using Curing of Polymer Precursor Film by Electron Beam Irradiation in Helium Atmosphere. A.Takeyama, M.Sugimoto, M.Yoshikawa: Materials Transactions, 2011, 52[6], 1276-80