A spin-dependent recombination spectrum observed in a wide range of SiC metal oxide semiconducting field effect transistors had previously been only tentatively linked to a silicon vacancy or vacancy related defect. By resolving hyperfine interactions in spin-dependent recombination detected spectra with 13C nuclei, an extremely strong argument was provided which identified the spin-dependent recombination spectrum with a silicon vacancy. Since the silicon vacancy spectrum dominated the spin-dependent recombination response in a wide variety of SiC metal oxide semiconducting field effect transistors, silicon vacancies were quite important traps in this technology.

Identification of a Silicon Vacancy as an Important Defect in 4H SiC Metal Oxide Semiconducting Field Effect Transistor using Spin Dependent Recombination. C.J.Cochrane, P.M.Lenahan, A.J.Lelis: Applied Physics Letters, 2012, 100[2], 023509