Stress migration was investigated on the basis of a molecular dynamics simulation using the Nose-Hoover and Parrinello-Rahman methods. The simulation permitted the observation of the motion of atoms under constant stress and temperature. The results showed that the simulated coefficients of lattice diffusion under stress-free condition agreed very well with experimental ones. This indicated the validity of the present simulation. The motion of atoms was accelerated by tensile hydrostatic stress within about 5 atomic layers of the grain boundary. Tensile hydrostatic stress accelerated the diffusion along the grain boundary, while compressive stress suppressed it. The coefficient was proportional to exp[-(ΔE)/{k(T/Tm)}] regardless of the magnitude of hydrostatic stress, where T and Tm were the temperature and the melting point of the grain boundary under the corresponding hydrostatic stress, respectively.Molecular Dynamics Study on Grain Boundary Diffusion in Aluminum under Hydrostatic Stress. Kitamura, T., Umeno, Y., Ohtani, R.: Transactions of the Japan Society of Mechanical Engineers A, 1996, 62[604], 2791-6. See also: JSME International Journal A, 1998, 41[1], 10-5