Molecular dynamics simulations were used to study the diffusion bonding of a Cu/Al interface. The interface analyzed was that between atomically smooth (001) crystalline planes of a Cu and an Al single crystals. The thickness of the transition layer of the bonded interface was obtained. The structural change of the interfacial region under different cooling rates was analyzed by means of the radial distribution function and the pair analysis techniques. The interface assumedan amorphous structure upon initial mechanical pressing and remained amorphous if the subsequent cooling rate was high. At lower cooling rates, however, the interface structure became crystalline. The diffusion-bonded Cu/Al specimen was subjected to tensile loading and its strength was compared with those of single-crystalline Cu and single-crystalline Al of the same size along the same direction. Calculated results indicated that the specimen with the interface had a lower tensile strength and a lower ductility than the corresponding single-crystalline Cu and Al specimens.

Molecular Dynamics Simulation of the Diffusion Bonding and Tensile Behavior of a Cu-Al Interface. Liu, H., Ke, F.J., Pan, H., Zhou, M.: Acta Physica Sinica, 2007, 56[1], 407-12