A method was presented for the determination of the diffusivities of donors in p-type semiconductors at relatively low temperatures. The method was based upon capacitance transient measurements. The law which described the capacitance transient was determined, and this then permitted the determination of the diffusion coefficient. It was found that the data for diffusion in CdTe could be described by:

D(cm2/s) = 6.5 x 10-6exp[-0.22(eV)/kT]

A change in slope of the Arrhenius plot was found, and this was explained in terms of a mechanism which involved acceptor-donor complex formation.

B.O.Wartlick, J.F.Barbot, C.Blanchard: Philosophical Magazine B, 1997, 75[5], 639-46

The best linear fits to the solute diffusion data ([26] to [45]) yield:

Cu: Ln[Do] = 0.21E – 14.3 (R2 = 0.06); Hg: Ln[Do] = E – 38.8 (R2 = 0.98);

In: Ln[Do] = 0.40E – 16.9 (R2 = 0.91); Na: Ln[Do] = 0.67E – 18.1 (R2 = 0.99)