Diffusion profiles were determined by using 48MeV O5+ back-scattering methods. These indicated that the concentration of Hg atoms at the surface reached 4 x 1020/cm3, and that the distribution could be explained in terms of a simple diffusion model. It was found that the diffusivity could be described by:

D (cm2/s) = 5 x 103 exp[-2.0(eV)/kT]

When CdTe was immersed in Hg which contained a small amount of Cd, the diffusion of Hg did not occur. It was concluded that the rate of Hg diffusion was controlled by the diffusion of Cd vacancies which were introduced by the out-diffusion of Cd atoms from the CdTe crystals.

K.Takita, K.Murakami, H.Otake, K.Masuda, S.Seki, H.Kudo: Applied Physics Letters, 1984, 44[10], 996-8

The best linear fits to the solute diffusion data ([26] to [45]) yield:

Cu: Ln[Do] = 0.21E – 14.3 (R2 = 0.06); Hg: Ln[Do] = E – 38.8 (R2 = 0.98);

In: Ln[Do] = 0.40E – 16.9 (R2 = 0.91); Na: Ln[Do] = 0.67E – 18.1 (R2 = 0.99)