The migration of Mn was measured at 500 to 800C, under conditions of Cd or Te saturation. The variation in Mn diffusivity as a function of the Cd partial pressure was measured at 600C. At 500 to 800C, the Mn diffusivity was described by:

D (cm2/s) = 2.25 x 101 exp[-2.35(eV)/kT]

in the case of Te saturation. At 600 to 800C, under Cd saturation, the results could be described by:

D (cm2/s) = 1.12 x 103 exp[-2.76(eV)/kT]

The data were consistent with those at 600C, which showed that the Mn diffusivity increased with decreasing Cd partial pressure. It was suggested that the behavior of the diffusivity was best explained in terms of a VCd” diffusion mechanism.

N.Y.Jamil, D.Shaw: Semiconductor Science and Technology, 1995, 10[7], 952-8

The best linear fits to the solute diffusion data ([26] to [45]) yield:

Cu: Ln[Do] = 0.21E – 14.3 (R2 = 0.06); Hg: Ln[Do] = E – 38.8 (R2 = 0.98);

In: Ln[Do] = 0.40E – 16.9 (R2 = 0.91); Na: Ln[Do] = 0.67E – 18.1 (R2 = 0.99)