Studies were made of self-diffusion and interdiffusion in buried Al71GaAs/ Al69GaAs/71GaAs and AlAs/71GaAs isotope heterostructures at 800 to 1160C. The Al-Ga interdiffusion at AlGaAs/GaAs and AlAs/GaAs interfaces revealed a concentration-dependent interdiffusion coefficient. The temperature dependence of Al diffusion was described by:

D (cm2/s) = 1.7 x 10-1 exp[-3.50(eV)/kT]

H.Bracht, E.E.Haller, K.Eberl, M.Cardona: Applied Physics Letters, 1999, 74[1], 49-51

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)