Measurements of the diffusion coefficient under various As-vapour pressures revealed that As self-diffusion was dominated by As self-interstitials. Annealing experiments performed on variously doped samples gave no indication of a Fermi-level effect, and it was concluded that As self-diffusion was governed mainly by neutral defects. The results for As self-diffusion at 900 to 1100C could be described by:

D (cm2/s) = 7.5 x 101 exp[-4.4(eV)/kT]

R.F.Scholz, U.Gösele: Journal of Applied Physics, 2000, 87[2], 704-10

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)