Recombination-enhanced impurity diffusion was observed for the first time in Be-doped GaAs. It was found that Be diffusion under forward bias was enhanced by a factor of about 1015 at room temperature, and the activation energy for diffusion decreased from 1.8eV for thermal diffusion,

D (cm2/s) = 8.3 x 10-7 exp[-1.8(eV)/kT]

to 0.6eV under recombination-enhanced conditions:

D (cm2/s) = 8.7 x 10-11 exp[-0.59(eV)/kT]

M.Uematsu, K.Wada: Applied Physics Letters, 1991, 58[18], 2015-7

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)