The diffusion of Be into GaAs, during the liquid-phase epitaxial growth of p-type Al0.8Ga0.2As, could be described by:

D (cm2/s) = 1.12 x 101 exp[-2.43(eV)/kT]

K.Masu, M.Konagai, K.Takahashi: Applied Physics Letters, 1980, 37[2], 182-4

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)