Low p-type surface concentrations were introduced at high temperatures by using a Ga-Cd alloy as a diffusion source. Concentration profiles were determined by using electrochemical profiling techniques. The resultant profiles were of complementary error function type. The data were described by:

D (cm2/s) = 1.10 x 10-13 exp[-2.12(eV)/kT]

when pure Cd was used as a diffusion source, together with a 5nm SiO2 overlayer. When a Ga-1at%Cd alloy was used as a source, at 800 to 850C, the diffusion could be described by:

D (cm2/s) = 1.29 x 10-14 exp[-2.17(eV)/kT]

D.K.Gautam, Y.Nakano, K.Tada: Japanese Journal of Applied Physics, 1991, 30[6], 1176-80

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)