The solution-growth of gallium nitride was simulated, and the diffusion behavior of nitrogen atoms on the growth surfaces was investigated. The simulation showed that the Ga-face grew flatter than the N-face. Upon comparing the diffusion coefficients of the N atom on Ga- and N-faces, the values on the Ga-face were found to be about 3.5 times higher than those on the N-face.

Molecular Dynamics Simulation of Diffusion Behavior of N Atoms on the Growth Surface in GaN Solution Growth. Kawamura, T., Kangawa, Y., Kakimoto, K., Suzuki, Y.: Journal of Crystal Growth, 2012, 351[1], 32-6