The Fe was diffused, from a spin-on glass film, onto n-type wafers at 700 to 900C. The diffusivities, as determined using junction-depth and conductivity techniques, could be explained in terms of a model which assumed the existence of exhaustible diffusion sources. It was found that the diffusivity was described by:

D (cm2/s) = 1.0 x 103 exp[-2.7(eV)/kT]

J.Ohsawa, H.Kakinoki, H.Ikeda, M.Migitaka: Journal of the Electrochemical Society, 1990, 137[8], 2608-11

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)