The diffusion of implanted Zn was studied, at 625 to 850C, by means of secondary ion mass spectrometry. A substitutional-interstitial diffusion mechanism was suggested to explain how deviations of the local Ga interstitial concentration from its equilibrium value regulated Zn diffusion. The Ga interstitial diffusion coefficient was described by:

D (cm2/s) = 4.39 x 10-1 exp[-2.14(eV)/kT]

M.P.Chase, M.D.Deal, J.D.Plummer: Journal of Applied Physics, 1997, 81[4], 1670-6

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)