Diffusion was studied in samples of molecular beam epitaxial material. The diffusion profiles of samples which had been annealed under various conditions were determined by using secondary ion mass spectrometry. It was deduced that the Ga interstitial diffusivity was described by:

D (cm2/s) = 6.4 x 10-5 exp[-1.28(eV)/kT]

J.C.Hu, M.D.Deal, J.D.Plummer: Journal of Applied Physics, 1995, 78[3], 1595-605

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)