Isotopically controlled heterostructures were used to study Ga self-diffusion by using secondary-ion mass spectrometry. This approach produced a near-ideal random walk situation that was free of perturbations arising from electric fields, mechanical stresses, or chemical potentials. It was found that the Ga self-diffusion coefficient in intrinsic material could be described by:

D (cm2/s) = 4.3 x 101 exp[-4.24(eV)/kT]

over 6 orders of magnitude, at 800 to 1225C, under As-rich conditions.

L.Wang, L.Hsu, E.E.Haller, J.W.Erickson, A.Fischer, K.Eberl, M.Cardona: Physical Review Letters, 1996, 76[13], 2342-5

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)