The diffusion of Cd into single crystals was investigated at 756 to 1201C. It was possible to deduce effective Cd diffusivities and Ga diffusivities from the Cd profiles; as mediated by doubly positively charged Ga self-interstitials. The diffusivity of doubly positively charged Ga self-interstitials could be described by:

D (cm2/s) = 3.5 x 104 exp[-5.74(eV)/kT]

Overall, the results strongly suggested that, in heavily p-doped GaAs, atomic transport on the Ga sub-lattice was governed by self-interstitials rather than by vacancies.

G.Bösker, N.A.Stolwijk, H.Mehrer, U.Södervall, W.Jäger: Journal of Applied Physics, 1999, 86[2], 791-9

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)