Liquid-phase epitaxial layers were studied by using a diffusion source which contained GaS and As in a mass ratio of 2:1. The diffusion of S was carried out in a sealed quartz ampoule at 820C, and in ambient As at a vapor pressure of 1atm. The diffusion data could be described by:

D (cm2/s) = 1.6 x 109 exp[-4.7(eV)/kT]

H.Nishi, Y.Horikoshi, H.Ito: Journal of Applied Physics, 1998, 84[10], 5811-3

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)