Samples were implanted with 120keV S+ ions, and capped with an 80nm-thick film of amorphous hydrogenated Si into which As was doped. The samples were then annealed in Ar gas (850 to 1000C, 0.25h). It was found that the S diffusivity depended upon the ion dose:

1 x 1015/cm2:       D(cm2/s) = 2.0 x 10-9 exp[-0.80(eV)/kT]

5 x 1014/cm2:       D(cm2/s) = 9.0 x 10-9 exp[-1.00(eV)/kT]

1 x 1014/cm2:       D(cm2/s) = 4.2 x 10-7 exp[-1.50(eV)/kT]

5 x 1013/cm2:       D(cm2/s) = 5.5 x 10-7 exp[-1.60(eV)/kT]

M.Sakaguchi, K.Yokota, A.Shiomi, K.Hirai, H.Takano, M.Kumagai: Japanese Journal of Applied Physics, 1996, 35[1-8], 4203-8

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)