Migration kinetics of low-concentration implanted 7Be in glassy carbon were studied by using the modified radiotracer technique at 1285 and 1340C (table 3). The annealed sample concentration profiles exhibited two distinctive components: a main profile broadening assigned to beryllium trapping in defects during annealing, and tail parts on each side of the profile maximum which were related to faster migration. Of the latter the profile representing bulk diffusion lay on the region free of defect influence and was well-described by concentration-independent diffusivity. The features of the concentration profile broadening towards the sample surface indicated partial Be trapping in defects upon annealing. Diffusion coefficients for Be migration in the damaged and defect-free material were provided. It was concluded that light impurity atom diffusion in glassy carbon was of the same order of magnitude as diffusion in diamond.Migration Kinetics of Ion-Implanted Beryllium in Glassy Carbon. Koskelo, O., Köster, U., Riihimäki, I., Räisänen, J.: Diamond and Related Materials, 2008, 17[12], 1991-3

Table 3

Diffusion of Be in glassy C