A study was made of molecular beam epitaxially grown samples which were -doped with Si and Al layers. Long-term diffusion annealing was carried out at 550 to 800C, and the concentration profiles were determined by means of secondary ion mass spectrometry. It was found that the results could be described,

D (cm2/s) = 7.9 x 100 exp[-2.25(eV)/kT]

It was concluded that the more accurate data which resulted from -doping showed that the diffusion coefficient was an intrinsic parameter, provided that the amount of dopant and the dislocation density were kept sufficiently low.

F.Bénière, R.Chaplain, M.Gauneau, V.Reddy, A.Régrény: Journal de Physique III, 1993, 3[12], 2165-71

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)