The migration of Si, on As sites, in -doped GaAs which had been grown onto GaAs(111)A, was investigated by means of secondary ion mass spectrometry. It was found that the diffusion parameters for GaAs(111)A differed from those for GaAs(001). The diffusion coefficient in GaAs(111)A was smaller than that in GaAs(001), and the activation energy in GaAs(111)A was higher than that in GaAs(001). It was found that, in p-type layers, Si-donors (Si on Ga sites) diffused easily to As sites. The data on Si acceptor diffusion could be described by:

D (cm2/s) = 1.14 x 10-2 exp[-2.74(eV)/kT]

M.Hirai, H.Ohnishi, K.Fujita, P.Vaccaro, T.Watanabe: Journal of Crystal Growth, 1995, 150[1-4], 209-13

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)