The annealing behavior of implanted silicon in amorphous carbon films deposited by a pulsed arc discharge method was studied (figure 3). Raman spectroscopy was used to characterize the changes in the bonding structure after annealing. The concentration profiles of Si were measured by secondary ion mass spectrometry. The obtained diffusion coefficients indicated that:

D (nm2/s) = 1.9 x 104exp[-1.6(eV)/kT]

Silicon Diffusion in Amorphous Carbon Films. Vainonen-Ahlgren, E., Ahlgren, T., Khriachtchev, L., Likonen, J., Lehto, S., Keinonen, J., Wu, C.H.: Journal of Nuclear Materials, 2001, 290-293, 216-9