The Zn was diffused into Si-doped samples, from a ZnAs2 source, at 575 to 700C in sealed evacuated quartz tubes. The samples were characterized by depth-profiling the photoluminescence at various temperatures. The photoluminescence spectra contained characteristic emissions which were associated with deep levels of Ga and As vacancies. A detailed analysis of the spectra revealed the role that was played by vacancies in Zn diffusion. It was found that the data could be described by:

D (cm2/s) = 2.05 x 100 exp[-2.28(eV)/kT]

N.H.Ky, L.Pavesi, D.Araujo, J.D.Ganière, F.K.Reinhart: Journal of Applied Physics, 1991, 69[11], 7585-93

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)