The growth and diffusion of abrupt Zn profiles in undoped, or Si-doped, material was monitored by means of secondary ion mass spectrometry. The sharp diffusion fronts which resulted from annealing indicated that the Zn diffusion coefficient was concentration-dependent. The data were bordered by the curves:

D (cm2/s) = 5.5 x 10-10 exp[-0.8(eV)/kT]

and

D (cm2/s) = 1.8 x 10-9 exp[-1.0(eV)/kT]

The diffusion of Zn at high concentrations appeared to be inhibited by crystal defect kinetics, and resulted in a relatively concentration-independent Zn diffusion coefficient. The V/III growth ratio did not have any effect upon Zn diffusion in undoped or Si-doped material. These data were summarized by:

V/III = 60:     D (cm2/s) = 2.0 x 103 exp[-3.0(eV)/kT]

V/III = 120:     D (cm2/s) = 1.0 x 106 exp[-3.6(eV)/kT]

P.Enquist, J.A.Hutchby, T.J.De Lyon: Journal of Applied Physics, 1988, 63[9], 4485-93

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)