The migration of Zn in AlGaAs at 650C was studied by using the sealed ampoule method and a ZnAs2 source. It was found that the results for zero Al content could be described by:

D (cm2/s) = 2.6 x 101 exp[-2.47(eV)/kT]

V.Quintana, J.J.Clemencon, A.K.Chin: Journal of Applied Physics, 1988, 63[7], 2454-5

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)