The diffusion of implanted Zn was studied, at 625 to 850C, by means of secondary ion mass spectrometry. A substitutional-interstitial diffusion mechanism was suggested to explain how deviations of the local Ga interstitial concentration from its equilibrium value regulated Zn diffusion. The intrinsic diffusion coefficient of implanted Zn could be described by:

D (cm2/s) = 6.08 x 10-1 exp[-3.21(eV)/kT]

M.P.Chase, M.D.Deal, J.D.Plummer: Journal of Applied Physics, 1997, 81[4], 1670-6

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)