The diffusion of boron into polycrystalline diamond films was carried out at 1000C. Experiments were conducted at different electric field strengths through a diamond-boron-diamond matrix for different times at a vacuum of 686Torr. During the experiments hydrogen was flowing into the reactor at a rate of 11sccm. The results showed that the best conditions to diffuse boron into diamond occurred at 200V and 8h. The diffusion coefficient of boron in diamond was calculated using the experimental data and was found to be 3.50 x 10-14cm2/s at 1000C. The diamond films showed a dramatic reduction in electrical resistivity from more than 1013Ωcm to 50Ωcm.Diffusion of Boron into Polycrystalline Diamond Films Using the Electric Field Enhanced Diffusion (EFED) Technique. Suarez, A., Prelas, M.A., Ghosh, T.K., Tompson, R.V., Loyalka, S.K., Miller, W.H., Viswanath, D.S.: Journal of Wide Bandgap Materials, 2002, 10[1], 15-27