The effect that dopants and defects, related to the ion-implantation process or due to interlayer strain have on the diffusion of light elements H (D), Li and B in diamond was studied. The depth profile of the implants was measured, by using secondary ion mass spectroscopy, in different kinds of diamond substrates (undoped, doped, defect free, defect containing) before and after thermal annealing at various temperatures. Implantation related residual defects were suggested to inhibit, presumably by forming very stable immobile complexes, the diffusion of the impurities studied. The D-defect complex breaks up abruptly at ∼1300K. Ion implanted B does diffuse weakly at high temperatures (T > 1300K).

Inhibition of Light Element Diffusion in Diamond Due to Ion Implantation Related Defects. Fizgeer, B., Uzan-Saguy, C., Cytermann, C., Richter, V., Avigal, I., Shaanan, M., Brener, R., Kalish, R.: Physica Status Solidi A, 2001, 186[2], 281-9