Diffusion of boron, lithium, nitrogen, oxygen, and hydrogen into type-IIa natural diamond was studied. The diffusion was performed in two steps. First, diffusion of Li and oxygen was performed in nitrogen atmosphere at 86C for one hour. The sample was then placed in a hot filament chemical vapor deposition growth reactor and diffusion was performed for two hours in hydrogen atmosphere from a boron solid source placed on the surface of the sample. The condition of diffusion were those used routinely during chemical vapor deposited growth. After diffusion, the concentration of Li was of the order of 2 x 1016/cm3 at the depth of 0.5 micrometer, and oxygen, nitrogen, and boron were found to be in the range (1-4) x 1020/cm3 at the same depth. The diffusion of hydrogen under conditions specific to chemical vapor deposited growth has also been studied for the first time and was found to be quite strong.

Diffusion of Boron, Lithium, Oxygen, Hydrogen, and Nitrogen in Type IIa Natural Diamond. Popovici, G., Wilson, R.G., Sung, T., Prelas, M.A., Khasawinah, S.: Journal of Applied Physics, 1995, 77[10], 5103-6