A theoretical model to describe the evolution of lithium and boron profiles in diamond after implantation and annealing was proposed. The model involves three differential equations for the defects and the impurities, as well as the kinetic equations for newly formed bonds produced by dangling bonds and the impurities. A possibility for the diamond-to-graphite transformation at high irradiation doses was taken into account. For graphite and diamond, different coefficients of diffusion and chemical reactions were used. The results of numerical simulation were in qualitative agreement with the experiment.

A Theoretical Model of Diffusion of Lithium and Boron Implanted into Diamond. Gadiyak, G.V.: Russian Microelectronics, 1997, 26[5], 313-6