The in-diffusion of As from an epitaxial n-type GaAs layer was studied at 700 to 900C. The results could be described by:

D (cm2/s) = 1.03 x 101 exp[-57.4(kcal/mol)/RT]

N.Isawa: Japanese Journal of Applied Physics, 1968, 7[1], 81

The best linear fits to the solute diffusion data ([93] to [120]) yield:

H: Ln[Do] = 0.89E – 33.6 (R2 = 0.92); Li: Ln[Do] = 1.06E – 18.8 (R2 = 0.95);

Sb: Ln[Do] = 0.30E – 14.5 (R2 = 0.63)