Samples which were implanted with Ge were annealed at 525 to 775C, and concentration profiles were determined by using resonance broadening methods. The Arrhenius plot deviated somewhat from linearity, but the diffusivity in the straight-line region could be described by:

D (cm2/s) = 9.8 x 10-4 exp[-2.2(eV)/kT]

Fast out-diffusion was found at low temperatures.

J.Räisänen: Solid-State Electronics, 1982, 25[1], 49-54

The best linear fits to the solute diffusion data ([93] to [120]) yield:

H: Ln[Do] = 0.89E – 33.6 (R2 = 0.92); Li: Ln[Do] = 1.06E – 18.8 (R2 = 0.95);

Sb: Ln[Do] = 0.30E – 14.5 (R2 = 0.63)