The present study well emphasises the role of the bias voltage on the deuterium diffusion in boron-doped diamond films ([B]=2 x 10 19/cm3). A -50V bias voltage applied between the deuterium microwave plasma and the diamond surface was required to initiate deuterium diffusion. Increasing effective diffusion coefficients were obtained from the SIMS profiles for bias voltages up to -80V. Then, for bias voltages higher than -120 V, the etching of diamond film became dominant.

Enhanced Deuterium Diffusion in Boron Doped Monocrystalline Diamond Films Using Bias-Assisted MPCVD. Arnault, J.C., Saada, S., Mer-Calfati, C., Jomard, F., Habka, N., Barjon, J., Chevallier, J.: Physics Letters A, 2010, 374[31-32], 3254-7