Diffusion of deuterium in diamond-like carbon films with various Si contents deposited by pulsed-arc discharge in a deuterium atmosphere was studied (figure 7). The concentration profiles of D were measured using secondary-ion-mass spectrometry and elastic-recoil detection techniques. A model was proposed for describing the experimental depth profiles. Diffusion, de-trapping and trapping of D were taken into account in the model. The diffusion coefficients obtained for non-trapped D resulted in activation energies of 1.5, 0.7, 0.6 and 1.2eV for samples containing 0, 6, 15 and 33at%Si, respectively.

Deuterium Diffusion in Silicon-Doped Diamondlike Carbon Films. Vainonen-Ahlgren, E., Ahlgren, T., Likonen, J., Lehto, S., Sajavaara, T., Rydman, W., Keinonen, J., Wu, C.H.: Physical Review B, 2001, 63[4], 045406