Capacitance-voltage measurements were performed on deuterated boron-doped natural type IIb diamond. They demonstrated the electrical passivation of the boron acceptors, which was manifested by a persistent decrease in capacitance after deuteration. Bias annealing experiments were carried out to determine the charge state of the diffusing deuterium. The differences between annealing with or without bias lead to the conclusion that boron-deuterium complexes dissociate at about 750K and that the released deuterium was positively charged.

Capacitance-Voltage Profiling of Deuterium Passivation and Diffusion in Diamond Schottky Diodes. Zeisel, R., Nebel, C.E., Stutzmann, M.: Diamond and Related Materials, 2000, 9[3], 413-6