The study of hydrogen diffusion in diamond-like carbon films revealed an activation energy of 2.0eV, while the deuterium diffusion, due to better measuring sensitivity, was found to be concentration dependent with the effective diffusion coefficient becoming smaller with decreasing deuterium concentration. A model according to which atomic deuterium diffuses and deuterium in clusters was immobile was developed to explain the experimentally observed profiles. Platinum diffusion in ZnSe was studied between 550 and 800C, and the results could be described by:

D (cm2/s) = 6.4 x 10-6exp[-1.7(eV)/kT]

The diffusion of n-type dopant silicon in GaAs was Fermi-level dependent and proceeds mainly through Ga vacancies. A novel method of solving the concentration dependent diffusion equation was developed and the experimentally observed silicon interstitials were incorporated in a concentration dependent diffusion model, which predicted that the charge state of a silicon interstitial in GaAs lattice was +1.

Diffusion of Impurities in Compound Semiconductors and Diamond-Like Carbon Films. Ahlgren, T.: Acta Polytechnica Scandinavica, Applied Physics Series, 218, 1998, 2-36