Hydrogen diffusion was investigated in boron-doped diamond from the redistribution profiles under thermal annealing of an initial step-like profile of (B,H) pairs located in a shallow region below the surface. For boron concentrations in the range 2 x 1019 to 1 x 1020/cm3, the profiles were Gaussian-like and effective diffusion coefficients could be calculated. From the diffusion activation energy, a (B,H) pair dissociation energy of 2.5eV was deduced. For lower boron concentrations, the redistribution of hydrogen was inhibited by the presence of deep traps for hydrogen which might be associated with structural defects.

Trap Limited Diffusion of Hydrogen in Boron-Doped Diamond. Teukam, Z., Ballutaud, D., Jomard, F., Chevallier, J., Bernard, M., Deneuville, A.: Diamond and Related Materials, 2003, 12[3-7], 647-51