The diffusion of hydrogen (deuterium) into various kinds of single crystal diamonds (defect free, boron doped or containing defects) was studied by electrical (Hall effect) and secondary ion mass spectroscopy (SIMS) measurements. Hydrogen was incorporated into the samples from a microwave hydrogen (deuterium) plasma at 820K. Post-diffusion annealing was also performed, when required, up to 1700K. The defects were introduced into the diamonds either by ion implantation or unintentionally during the homo-epitaxial microwave chemical vapor deposition growth of the diamond layer. The diffusion profile of hydrogen was found to be affected by the presence of dopants and defects (impurities as well as native defects). Hydrogen diffusion was already observed at 850K in B-doped or defect containing diamonds. This result was in contrast to the case where hydrogen was implanted into a B implantation doped diamond layer in which only a slight diffusion of hydrogen was observed above 1200K. The electrical characteristics of the initially B doped layer were found deteriorated or improved by the diffusion of hydrogen, depending on the characteristics of the B-doped layer. The experimental results were interpreted in the light of published theoretical predictions.

Diffusion of Hydrogen from a Microwave Plasma into Diamond and Its Interaction with Dopants and Defects. Uzan-Saguy, C., Cytermann, C., Fizgeer, B., Richter, V., Avigal, Y., Shaanan, M., Brener, R., Kalish, R., Bustarret, E., Chevallier, J.: Diamond and Related Materials, 2002, 11[3-6], 316-22