The evolution and the diffusion of H2 in chemical vapor deposited diamond films, in which ion implantation damage was repaired by hydrogen plasma treatment, were studied by gas effusion spectroscopy. In the gas effusion spectra of these samples, two H2 evolution peaks were found at about 1220 and 1360K, the origins of which were considered to be evolution of H2 from the (111) surface and the (100) surface, respectively. The diffusion of hydrogen and the defects in chemical vapor deposited diamond films treated with hydrogen plasma after ion implantation were discussed using a H2 evolution model.

Evolution and Diffusion of Hydrogen in CVD Diamond Films Treated with Hydrogen Plasma. Itoh, T., Yagyu, H., Mori, Y., Hatta, A., Ito, T., Hiraki, A., Nitta, S.: New Diamond and Frontier Carbon Technology, 1996, 6[5], 293-9