The effect of isothermal annealing on the depth profiles of nitrogen atoms implanted into synthetic diamonds was studied by secondary-ion mass spectrometry. The annealing was performed under vacuum at 1400C for 1, 5 or 20h. It was found that the depth profile broadens on a macroscopic scale with annealing time. The broadening was successfully represented by a mathematical model of diffusion. The diffusion coefficient was roughly estimated at 2.3 x 10-15, 8.5 x 10-16 and 3.7 x 10-16cm2/s for annealing times of 1, 5 and 20h, respectively.

Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds. Cherepov, E.I., Tishkovskii, E.G., Obodnikov, V.I., Palyanov, Y.N., Sokol, A.G.: Russian Microelectronics, 2002, 31[5], 277-81