Natural diamonds implanted with 160keV, 340keV and 69MeV nickel ions were annealed at up to 2200C and studied by cathodoluminescence. The depth distribution profiles of the implanted nickel and radiation defects were investigated. It was shown that high temperature diffusion strongly influences the distribution both of nickel and of radiation defects. The vacancy-enhanced mechanism of diffusion was supposed for nickel in ion-implanted diamond.

Diffusion of Implanted Nickel in Diamond. Filipp, A.R., Tkachev, V.V., Varichenko, V.S., Zaitsev, A.M., Chelyadinskii, A.R., Kluev, Y.A.: Diamond and Related Materials, 1992, 1[2-4], 271-6